Graphene-based field effect transistor in two-dimensional paper networks

We demonstrate the fabrication of a graphene-based field effect transistor (GFET) incorporated in a two-dimensional paper network format (2DPNs). Paper serves as both a gate dielectric and an easy-tofabricate vessel for holding the solution with the target molecules in question. The choice of paper enables a simpler alternative approach to the construction of a GFET device. The fabricated device is shown to behave similarly to a solution-gated GFET device with electron and hole mobilities of similar to 1256 cm(2) V-1 s(-1) and similar to 2298 cm(2) V-1 s(-1) respectively and a Dirac point around similar to 1 V. When using solutions of ssDNA and glucose it was found that the added molecules induce negative electrolytic gating effects shifting the conductance minimum to the right, concurrent with increasing carrier concentrations which results to an observed increase in current response correlated to the concentration of the solution used. (C) 2016 Elsevier B.V. All rights reserved.