Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 16, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab03c2
Keywords
MRAM; VCMA; magnetization switching
Categories
Funding
- ImPACT Program of the Council for Science, Technology and Innovation
Ask authors/readers for more resources
We investigate magnetization switching driven by the voltage-controlled magnetic anisotropy (VCMA) effect in two series of magnetic tunnel junctions with a Ta/CoFell/MgO structure. We demonstrate that improved thermal stability as well as the VCMA effect make it possible to achieve write error rates lower than 10(-6). We also show that the thermal stability of the free layer plays an important role in suppressing increased write errors due to precession-orbit transition induced by thermal fluctuation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available