4.6 Article

Improvement of write error rate in voltage-driven magnetization switching

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 16, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab03c2

Keywords

MRAM; VCMA; magnetization switching

Funding

  1. ImPACT Program of the Council for Science, Technology and Innovation

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We investigate magnetization switching driven by the voltage-controlled magnetic anisotropy (VCMA) effect in two series of magnetic tunnel junctions with a Ta/CoFell/MgO structure. We demonstrate that improved thermal stability as well as the VCMA effect make it possible to achieve write error rates lower than 10(-6). We also show that the thermal stability of the free layer plays an important role in suppressing increased write errors due to precession-orbit transition induced by thermal fluctuation.

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