Improvement of the Electrical Properties of a Cu(In, Ga)Se2 Solar Cell Based on a ZnS Buffer Layer from Radio Frequency Magnetron Sputtering

We fabricated zinc sulfide (ZnS) buffer layers with a great band gap and small light loss at a short wavelength, and then applied them to copper indium gallium sulphur-selenide (CIGS) thin film solar cells. A CIGS evaporation system was used for fabrication of the CIGS thin films, and a thickness monitor was used to check the evaporation rate at each source. The evaporation rate and deposition time were adjusted to change the composition ratio of the thin films. Also, CIGS thin films were deposited by changing the temperature of the substrates from room temperature (RT) to 150 degrees C, 250 degrees C, and 350 degrees C during ZnS deposition, and among them, the optimal substrate temperature was selected to measure the light conversion efficiency of ZnS-deposited CIGS thin film solar cells. The grown ZnS thin films were analyzed for crystallinity and composition by using X-ray diffraction, and by using a scanning electron microscope, the cross section and surface shape of the thin films were examined. When we applied the ZnS thin film that was fabricated at a temperature of 150 degrees C with a thickness of 50 nm as a buffer layer for the CIGS solar cells, we obtained a light conversion efficiency of 14.48% without an antireflection layer.