Ga doping improved electrical properties in p-Si/n-ZnO heterojunction diodes

Doping of metal ions in the ZnO nanomaterials have attained much research interest for increasing the optical and electrical properties in various applications. Here, we report Ga doped ZnO nanoparticles obtained using the phytochemicals assisted hydrothermal synthetic strategy. The phytochemicals in the extract of the neem (Azadirachta indica) leaves were utilized as both reactant and agglomeration preventing agent. The structural studies indicated the Ga doping introduced decrease in the interplanner distance of the Zn-O lattice. The electron microscopic images revealed the consistency of the interconnected particles morphology for the Ga doping in ZnO nanoparticles. The emission spectrum indicated the electron rich Ga3+ ions induced fermi energy level shift towards the conduction band in accordance to the B-M effect. Further, we had fabricated p-Si/n-Zn1-xGaxO heterojunction diode structures using the Ga doped ZnO nanomaterials. The electrical studies of the diodes were indicated the enhanced charge conduction for Ga doping.