Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 30, Issue 8, Pages 8024-8034Publisher
SPRINGER
DOI: 10.1007/s10854-019-01124-3
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Funding
- Deanship of Scientific Research at King Khalid University [R.G.P.1/45/39]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2017R1D1A1A09000823]
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Undoped and different concentrations of iron (Fe) doped tin sulphide (SnS) thin films were coated by nebulizer spray pyrolysis method with the substrate temperature of 350 degrees C. Polycrystalline nature of orthorhombic crystal structured pure and Fe doped SnS (Fe:SnS) thin films confirmed by X-ray diffraction (XRD) patterns. Structural studies further explored the preferential orientation of (201) plane for undoped SnS and their shifts to (400) and (111) directions for Fe:SnS at 6 and 10 wt.% of Fe concentration, respectively. The versatile route of structural modification has obviously demonstrated due to inclusion of Fe doping in SnS. Raman spectra further confirmed the structural variation of Fe:SnS. Topological variations obviously explained by atomic force microscopy images for pure and Fe:SnS. Optical results evidently claimed the deterioration of band gap values from 1.96 to 1.58eV due to increase of Fe doping concentrations from 0 to 10 wt.%, respectively. Luminescence spectra showed a strong emission peak centered at 772nm and low resistivity 3.32x10(-2)cm with the high carrier concentration for 8 wt.% of Fe concentration using prepared Fe:SnS film. The fabricated solar cell device with n-CdS exposed the 0.18% of efficiency for p-Fe:SnS prepared using 8 wt.% Fe concentration.
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