Thermoelectric properties of indium-doped zinc oxide sintered in an argon atmosphere

Solid-state reaction (SSR) was used to synthesize samples of (Zn1-xInx)O, with x=0.05, 0.02, 0.01, 0.005 and0.00 respectively. All compositions were sintered in an argon atmosphere and their thermoelectric properties, phase constituents, and microstructures were investigated. Single-phase ceramic was formed for each composition with dense microstructure. In3+ doping lowered the electrical resistivity of ZnO and in the present study, lower value of electrical resistivity 1.884 mcm and highest power factor (P.F) 4.660x10(-4)WK(-2)m(-1) at 693.4 degrees C respectively are obtained for the composition with x=0.02. The electrical resistivities () of all compositions were regulated. The tuned and regulated() are expected to be helpful for future thermoelectric devices.