Journal
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume 35, Issue 8, Pages 1740-1746Publisher
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2019.03.008
Keywords
Heterojunction; BiVO4; Photoelectrochemical; Atomic layer deposition
Funding
- National Natural Science Foundation of China [51772197, 51422206, 51372159]
- 1000 Youth Talents Plan, Key University Science Research Project of Jiangsu Province [17KJA430013]
- 333 High-level Talents Cultivation Project of Jiangsu Province, Six Talents Peak Project of Jiangsu Province
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
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Bismuth vanadate (BiVO4) is a promising photoanode material owing to the narrow bandgap, appropriate band position, and excellent resistance against photocorrosion, however, the performance of photoelectrochemical (PEC) water splitting is largely limited by the poor carrier separation and transport ability. To address these issues, for the first time, we fabricate BiVO4 film/CuO nanocone p-n junctions as photoanodes by combing a facile spin-coating process and water bath reaction. This structure strengthens the light harvesting and promotes the charge separation and transport ability. The surface defects states are passivated by coating conformally ultrathin TiO2 onto CuO surface through atomic layer deposition (ALD) technique. Benefiting from the favorable morphology, energy band, and surface treatment, the BiVO4/CuO/TiO2 heterojunction generates an improved photocurrent that is much higher than pure BiVO4. The detailed mechanism investigations indicate that the synergetic optimization of charge separation and injection efficiency in the bulk and surface of photoelectrodes can significantly improve the performance of PEC cells. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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