4.7 Article Proceedings Paper

Integration of Eight-Channel Directly Modulated Membrane-Laser Array and SiN AWG Multiplexer on Si

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 37, Issue 2, Pages 266-273

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2018.2873742

Keywords

Arrayed-waveguide grating multiplexer; direct bonding; heterogeneous integration; semiconductor lasers; SiN waveguide; wavelength division multiplexing

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Eight-channel 56-Gbit/s direct four-level pulse-amplitude modulation is demonstrated using a 1.3-mu m wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eightchannel bit-error rate was 2.7 x 10(-3), which is less than the 7%-overhead hard-decision forward-error-correction limit.

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