Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 241, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.elspec.2019.03.004
Keywords
Semiconductors; Dopant contrast; Low energy SEM; PEEM; Mirror electron microscopy; Surface treatments
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Funding
- Technology Agency of the Czech Republic (Competence Centre: Electron Microscopy) [TE01020118]
- MEYS CR [LO1212]
- EC (ALISI) [CZ.1.05/2.1.00/01.0017]
- European Commission [606988]
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Methods available for the mapping of dopants in silicon-based semiconductor structures with p-type as well as n-type doped patterns using low and very-low-energy electrons are reviewed together with the results of demonstration experiments.
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