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JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/aaffc2
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The direct growth of a III-V compound semiconductor on Si(001) is an unsolved problem for monolithically integrated photonic devices on the Si platform. Here, we report the growth of a high-quality GaAs layer on on-axis Si(001) substrates by MBE. A single domain GaAs layer was grown on top of a AlGaAs nucleation layer on a Si(001) substrate. By optimizing the Al content of the nucleation layer, anti-phase domains were self-eliminated at the GaAs layer. This result represents a key step towards the realization of monolithically integration of III-V devices on the Si platform using direct epitaxial growth. (C) 2019 The Japan Society of Applied Physics
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