Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/aafc99
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Funding
- Nano-Material Technology Development Program of the National Research foundation of Korea (NRF) [2016M3A7B4909942]
- Creative Materials Discovery Program of the Creative Multilevel Research Center - Ministry of Science, ICT, and Future Planning, Korea [2015M3D1A1068062, 2017M3D1A1040828]
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A touch pressure sensor using a graphene-Si Schottky junction barristor gated with the piezoelectric polymer poly(vinylidenefluoride-cotrifluoroethylene) has been demonstrated that combines a high on-off ratio (over 10(2)) and low leakage current characteristics. The performance of this device was optimized by presetting the initial Fermi level of graphene using a polymer doping process. Sensing current modulation ratios up to 312% were achieved under 3 MPa touch pressure. (C) 2019 The Japan Society of Applied Physics
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