Journal
IET OPTOELECTRONICS
Volume 13, Issue 4, Pages 151-154Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-opt.2018.5037
Keywords
photoconductivity; p-i-n photodiodes; contact electrode shape; incidence direction; p-i-n photodiodes; vertical illumination direction; ring-covered p-contact electrode; FCC-PD; RCC-PD; mesa diameter; fully-covered p-contact electrode; p-side illumination; n-side illumination; output photocurrent; size 40; 0 mum; voltage-3; 0 V; frequency 33; 6 GHz; current 7; 0 mA
Funding
- Joint Laboratory of Quantum Optoelectronics and the Theory of Bivergentum
- Beijing International Scientific and Technological Cooperation Base of Information Optoelectronics and Nanoheterogeneous Structure
- Specialised Research Fund for the Doctoral Program of Higher Education of China [20130005130001]
- National Nature and Science Foundation of China (NSFC) [61574019, 61674018, 61674020]
- Fund of State Key Laboratory of Information Photonics and Optical Communications
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The influences of contact electrode shape and vertical illumination direction on the performance of p-i-n photodiodes (PDs) are studied by theory and experiment. The PDs with ring-covered p-contact electrode (RCC-PD) and fully-covered p-contact electrode (FCC-PD) were fabricated and tested. For the RCC-PD, the influences of p-side and n-side illumination on the bandwidth also analysed. The results show that for the PDs with 40 mu m mesa diameter under -3 V bias and 7.0 mA output photocurrent, a 40.6 and 31.6% increase of bandwidth and responsivity in the FCC-PD compared with RCC-PD. The 3 dB bandwidth and responsivity of the FCC-PD with a 40 mu m mesa diameter at -3 V bias can reach 33.6 GHz and 0.5 A/W, respectively.
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