Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 66, Issue 1, Pages 474-481Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2018.2880865
Keywords
Heavy ions; Monte Carlo N-particle (MCNP); silicon carbide power devices; single-event burnout (SEB); single-event effects
Funding
- Early Stage Innovations Grant through the NASA's Space Technology Research Grants Program [NNX17AD05G]
- Nuclear Regulatory Commission Fellowship Program [NRC-HQ-84-15-G-0018]
- NASA [1003408, NNX17AD05G] Funding Source: Federal RePORTER
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SiC power devices have been found experimentally to burn out from heavy ion strikes with linear energy transfers as low as 2.0 MeV.cm(2)/mg. In this paper, to better understand the failure mechanisms, we study the single-event burnout (SEB) phenomenon using a unified physics model between heavy ion radiation transport and device response. High-fidelity radiation data, generated from a general purpose Monte Carlo N-particle transport code (MCNP6.2), were modeled using a double Gaussian function to take into account both the heavy ion and the delta ray contributions. SiC junction barrier Schottky (JBS) diodes underwent 3-D TCAD electrothermal simulations using the double Gaussian model. This model was compared against other heavy ion models to determine the behavior of the thermal response from a heavy ion strike. The results reveal that there is a more rapid thermal response from models using high-fidelity heavy ion radiation data than approximated models provided by TCAD simulators. Peak temperature results from high-voltage SiC JBS diodes, which agree with the experimental observation of SEBs in SiC power devices.
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