4.6 Article

Effects of Postannealing on the Characteristics and Reliability of Polyfluorene Organic Light-Emitting Diodes

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 2, Pages 1057-1062

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2888858

Keywords

Luminescence; organic light-emitting diode (OLED); polyfluorene; reliability

Funding

  1. International Science and Technology Cooperation Program of China [2016YFE0124300]

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We studied the effects of postannealing on the performance of polyfluorene organic light-emitting diodes (OLEDs) with a pure poly(9,9'-dioctylfluorene-co-benzothiadiazole) (F8BT) emissive layer. After annealing at 150 degrees C-200 degrees C, the OLED exhibited the lowest voltage and highest luminance. This correlated well with the highest crystallinity of the F8BT film, as revealed by X-ray diffraction. As the temperature was raised up to 300 degrees C, the voltage at 50 mA/cm(2) increased by 2.7 V, and the luminance decreased by 44%, whereas the device lifetime was markedly extended by as much as 13 times. The loss of crystallinity at high temperatures suggested that structural disorders were created, resulting in degraded charge transport and radiative process. Our study demonstrates the necessity of posttreatment above the glass transition temperature to obtain desirable efficiency and lifetime of solution-processed polyfluorene OLEDs.

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