Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 3, Pages 455-458Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2896953
Keywords
Phase-change; RF switch; thermometry; power handling; energy-efficiency; SbTe
Categories
Funding
- DARPA Matrix Program
- Stanford Non-Volatile Memory Technology Research Initiative
- Andrew and Erna Finci Viterbi Foundation
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Linear radio-frequency (RF) switches are highlydesiredinwireless system front ends. Here, we report electro-thermal measurements and modeling of an indirectly heated phase change RF switch (IPCS). We study the energy-efficiency of the IPCS device by electro-thermal modeling and show that its layer design is crucial to reduce its switching power. Thermally optimized SbTe-based IPCS devices switch at a record-low power of similar to 8 mW/mu m(2), approaching the efficiency limit of such indirectly heated devices.
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