Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 3, Pages 463-466Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2891540
Keywords
NCFET; sub 60 mV/decade; ferroelectric; capacitance matching
Categories
Funding
- Berkeley Center for Negative Capacitance Technology
- Berkeley Device Modeling Center
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Negative-capacitance transistors use ferroelectric (FE) material in the gate-stack to improve the transistor performance. The extent of the improvement depends on the capacitance matching between the FE capacitance (C-fe) and the underlying MOS transistor (C-MOS). Since both CMOS and Cfe have strong non-linearity, it is difficult to achieve a good matching for the entire operating gate voltage range. In this letter, we discuss a new approach using multi-layer FE to engineer the shape of Cfe. The proposed method is validated using the TCAD simulation of negative-capacitance FDSOI transistor, and the results show that it leads to better sub-threshold swing as well as lower power supply V-dd compared with a prototype single-layer negative-capacitance field-effect transistor.
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