Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 2, Pages 167-170Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2889346
Keywords
Zirconium oxide; laser anneal; continuous wave; MOSCAP; visible laser; blue; 445 nm wavelength; scavenging effect
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Funding
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry Energy (MOTIE) [10052804, 10067739]
- Korea Semiconductor Research Consortium (KSRC)
- Nano. Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIT, Korea) [2015M3A7B7045470]
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This letter reports the fabrication of a high quality gate oxide for metal-oxide-semiconductor field-effect transistors using a continuous-wave blue laser. A thin Zr metal layer was inserted between the dielectric and substrate to increase laser absorption and reduce the interface layer. A simulation of laser irradiation showed that the metal layer insertion induces a significant increase in temperature during laser annealing compared with the dielectric without a metal layer. The laser annealed capacitor with a 1-nm-thick Zr metal layer showed superior electrical characteristics, such as high capacitance, low leakage current, low fixed charge density, and low interface state density. Based on these results and the economic advantage of blue laser diodes, this technique can be a solution for low temperature processes, such as monolithic 3-dimensional integration, where low temperature processes are required.
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