Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 2, Pages 216-219Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2889412
Keywords
Ferroelectric field-effect transistor (FeFET); hafnium oxide; cycling endurance; self-heating failure recovery
Categories
Funding
- European Fund for regional Development EFRD
- Free State of Saxony, Europe supports Saxony
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This letter investigates the impact of self-heating on the post-cycling functionality of a scaled hafnium oxide-based ferroelectric field-effect transistor (FeFET). The full recovery of FeFET switching properties and data retention after the cycling endurance failure is reported. This is achieved by damage annealing through localized heating, which is intentionally induced by a large current flow through the drain (source)-body p-n junctions. The results highlight that the local thermal treatments could be exploited to extend the cycling endurance of FeFETs.
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