Correction

Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices (vol 39, pg 1900, 2018)

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 2, Pages 353-353

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2889811

Keywords

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Funding

  1. National Key Research and Development Program of China [2016YFB0400502]
  2. National Power Grid Corp Science and Technology Project [SGRI-GB-71-16-002]

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