Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 1, Pages 24-27Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2880735
Keywords
Schottky diode; resistance switching; amorphous indium-gallium-zinc-oxide (a-IGZO); cross-bar selector
Categories
Funding
- National Key Research and Development Program [2018YFA0208503, 2016YFA0201802, 2017YFB0701703]
- Opening Project of the Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Beijing Training Project for the Leading Talents in ST [Z151100000315008]
- National Natural Science Foundation of China [61574107, 51503167, 61725404, 61574166, 61874134, 61804170, 61221004, 61404164]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB30000000, XDB12030400]
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In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-galliumzinc oxide/Cu device. Depending on the reverse voltage applied to the Cu electrode, the device itself can be obviously switched from the diode mode to the RS mode. The device shows outstanding diode features with a large rectification ratio up to 3 x 10(6) at +/- 1 V and a high forward current density of 100 A/cm(2) at + 1 V. Furthermore, repeatable and stable switching behavior with low voltage has also been observed by increasing the reverse forming voltage. The physical model of Schottky barrier and conductive filament is proposed to explain the coexistence phenomenon. These achievements increase the application diversity of the metal-oxide film and provide a great potential application in active-matrix flat-panel displays.
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