Journal
ELECTRONICS LETTERS
Volume 55, Issue 8, Pages 446-447Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2018.8143
Keywords
rectifiers; CMOS integrated circuits; energy harvesting; leakage currents; MOSFET circuits; wireless sensor networks; UHF integrated circuits; integrated circuit design; high-efficiency CMOS rectifier; low reverse leakage; RF energy harvesting; power conversion efficiency; energy harvesting wireless sensors; CMOS cross-coupled differential RF rectifier; rectifying device; peak PCE; conventional rectifier; reverse leakage current reduction; CMOS technology; thick-oxide MOSFET; UHF band application; size 0; 18 mum; voltage 1; 0 V; efficiency 75; 2 percent; efficiency 8; 8 percent
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2017R1A2B4008649]
- National Research Foundation of Korea [2017R1A2B4008649] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A CMOS cross-coupled RF rectifier that improves power conversion efficiency (PCE) with low reverse leakage current for energy harvesting wireless sensors is proposed. In this Letter, the authors propose a CMOS cross-coupled differential RF rectifier that uses a thick-oxide MOSFET as a rectifying device to improve PCE by reducing reverse leakage current. The proposed rectifier is designed for UHF band application using 0.18 mu m CMOS technology. Proposed rectifier achieves a peak PCE of 75.2% and sensitivity of - 17 dBm for 1 V output voltage. Peak PCE is improved by 8.8% compared to the conventional rectifier.
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