Journal
ELECTROCHIMICA ACTA
Volume 297, Issue -, Pages 488-496Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2018.12.015
Keywords
Graphitic carbon nitride p/n type; Fermi level; K&I co-doping; Photoelectrochemical performance
Categories
Funding
- National Natural Science Foundation of China [41576114, 41376126]
- Qingdao Innovative Leading Talent Foundation [15-10-3-15-(39)-zch]
- Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research) [14-2-4-4-jch]
- State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China [614290101011703]
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Graphitic carbon nitride (g-C3N4) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I-2. The K&I co-doping modulates the band structure of g-C3N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3N4 (K&I-C3N4) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance. (C) 2018 Elsevier Ltd. All rights reserved.
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