Journal
CRYSTAL GROWTH & DESIGN
Volume 19, Issue 4, Pages 2253-2258Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.8b01872
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Funding
- US Army Research Office (ARO) [W911NF-18-1-0418]
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In this work, we introduce the growth of a new complex oxide lead oxy-chalcogenide (PbOxSe1-x) thin film using an oxygen plasma-assisted molecular beam epitaxy method. Freshly cleaved BaF2(111) wafers were used as the substrates for this growth study. Systematic characterization of X-ray diffraction peaks, Raman shifts, absorption spectra, scanning electron microscopic imaging, and Hall measurements were conducted to elucidate the structural, optical, and electric properties of the as-grown PbOxSe1-x thin films. Specifically, X-ray diffraction measurements revealed that PbOxSe1-x films maintained the same rock-salt crystal structure as the PbSe semiconductor, but a slight shift in the lattice parameter was observed. A blue shift in the optical absorption edge also suggests that the inclusion of oxygen atoms led to the formation of a ternary compound crystal structure. Furthermore, all PbOxSe1-x thin films were observed to be polycrystalline in nature and displayed preferred [100] orientated grains. Slight variations in LO and TO phonon peak positions were also observed under Raman spectroscopy, signifying the presence of lead-oxygen bonding. This new type of complex oxide thin film has never been reported and could potentially be used to develop advanced optoelectronic devices, including mid-infrared photodetectors and light-emitting devices.
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