Journal
CHEMICAL RECORD
Volume 19, Issue 8, Pages 1729-1752Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/tcr.201800191
Keywords
quantum dot light-emitting diodes; quantum dot; charge transport; device structure; full-color display
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Funding
- National Natural Science Foundation of China [61775090, 61574003, 61774010]
- Basic Research Program of Science, Technology and Innovation Commission of Shenzhen Municipality [JCYJ20170307105259290]
- Guangdong Special Funds for Science and Technology Development [2017A050506001]
- Guangdong Natural Science Funds for Distinguished Young Scholars [2016A030306017]
- National Key R&D Program of China [2016YFB0401702]
- Shenzhen Peacock Plan [KQTD2015071710313656]
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The unique features of solution-processed quantum dots (QDs) including emission tunability in the visible range, high-quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially, for the preparation of wide color gamut displays, QDs with high photoluminescence quantum yield are deemed as the optimal fluorescent emitter that has been utilized in the backlight for liquid crystal display. Nevertheless, the commercialization of electrically driven self-emissive quantum dot light-emitting diode (QLED) display is the ultimate target due to its merits of high contrast, slim configuration and compatibility with flexible substrate. Through the great efforts devoted to material engineering and device configuration, astonishing progresses have been made in device performance, giving the QLED technology a great chance to compete with other counterparts for next-generation displays. In this review, we retrospect the development roadmap of QLED technology and introduce the essential principles in the QLED devices. Moreover, we discuss the key factors that affect the QLED efficiency and lifetime. Finally, the advances in device architectures and pixel patterning are also summarized.
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