Journal
APPLIED SURFACE SCIENCE
Volume 467, Issue -, Pages 119-123Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2018.10.157
Keywords
Amorphous semiconductor; Thin film; Surface oxidation; Ultraviolet irradiation; Raman spectroscopy; Atomic force microscopy
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Funding
- DAAD [57313677, 91574393]
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Amorphous As2S3 films with surface roughness near 0.5 nm were prepared by thermal evaporation. Raman measurements performed under ultraviolet (UV) laser excitation (325 nm) revealed a series of sharp intense peaks appearing at laser power density P-exc above 150 kW/cm(2). No such effects were observed at Raman measurements under visible (514.7 or 632.8 nm) light excitation, even for much higher P-exc values. The new Raman peaks are identified as arsenolite (As2O3) features. UV light-assisted oxidation of the As2S3 surface is discussed.
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