Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5081965
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Funding
- State Key Project of Research and Development of China [2017YFA0206302]
- National Nature Science Foundation of China [51590883, 51331006, 51771198, 51801212]
- Chinese Academy of Sciences [KJZD-EW-M05-3]
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The effect of an ultrathin W interlayer on the perpendicular magnetic anisotropy (PMA), spin orbit torque (SOT), and SOT-induced magnetization switching of Ta/CoFeB/MgO films has been investigated. Both the anisotropy energy density and the spin-torque efficiency are enhanced by inserting the ultrathin W interlayer. The results suggest that the large enhancement of the spin-torque efficiency originates from the increase in the interfacial spin transparency using a simplified drift-diffusion model. The minimum in-plane field required for SOT-induced complete switching is reduced to 12 Oe for the sample with the W interlayer, which is confirmed by polar Kerr microscopy. The reversed domain nucleation and propagation of the reversal processes have been observed by Kerr imaging. It is concluded that the ultrathin W interlayer increases the spin transmission and reduces the strength of the Dzyaloshinskii-Moriya interaction. Our result suggests that the interface modification is an efficient way to modulate the PMA and SOT. Published under license by AIP Publishing.
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