Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5084752
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Funding
- Singapore National Research Foundation under CRP Award [NRF-CRP10-2012-02]
- Key University Science Research Project of Jiangsu Province [16KJA140002]
- National Natural Science Foundation of China [51772200]
- China Scholarship Council
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The VO2/Pb(Zr0.52Ti0.48)O-3 (PZT) thin film heterostructure device was first grown to investigate the piezoelectric control of resistance switching in Vanadium dioxide (VO2) films with a PZT underlayer. The results show that upon applying a continuous gate-electric-field (E-b) on the heterostructure, a butterfly shape resistance (R) vs. E-b curve of VO2 was observed. This R-E-b curve agrees well with the strain vs. electric-field butterfly curve of the underlying PZT, indicating that the resistance changes in VO2 were induced by piezoelectric lattice strain at the VO2/PZT interface. A repeated pulsed E-b modulation of VO2 resistance was further demonstrated. The resistance of the VO2 film decreases under compressive strain and increases under tensile strain. The resistance of change of the VO2 film under different strains has been explained using the first-principles calculations. The above results show that repeatable resistance switching in the VO2 film can be realized in the VO2/PZT heterostructure with a small Eb around room temperature. Published under license by AIP Publishing.
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