Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5086840
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Funding
- European Union's FP7/Horizon 2020 research and innovation program under Grant Agreement Graphene Flagship [696656]
- French Agence Nationale de la Recherche (ANR) Project EPOS-BP [ANR-17-CE24-0023-03]
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We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices. (C) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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