Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation

Behaviors such as expansion and contraction of single Shockley stacking faults (1SSFs) in a 4H-SiC epitaxial layer under various ultraviolet (UV) irradiation conditions were systematically investigated. We demonstrate that the area of the 1SSF has a key role in its behavior during UV light exposure. Contraction immediately progresses after a relatively weak UV irradiation at a high-temperature. The contraction velocity gradually decreases and eventually becomes zero at a certain area, which is dependent on the UV irradiation. (C) 2019 The Japan Society of Applied Physics