High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm-2

We demonstrate high-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with Mo anode and low turn-on voltage of 0.31 V. AlGaN/GaN SBDs with anode to cathode spacing of 6/10/15/20/25 mu m achieve a breakdown voltage (BV) of 0.83/1.23/1.62/2.46/2.65 kV, yielding a power figure-of-merit (FOM) of 1.53/1.82/1.77/2.65/2.12 GW cm(-2). The power FOM of 2.65 GW cm(-2) and BV of 2.65 kV are the best results of AlGaN/GaN SBDs on silicon substrate. Combined with the good dynamic performance with only 10% R-on increase when switched from a -600 V stress for 10 ms, GaN SBDs verify their great promise for future power electronic applications. (C) 2019 The Japan Society of Applied Physics