Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab0730
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Funding
- Polish National Science Centre within the research project OPUS [2014/15/B/ST3/04252]
- Polish National Centre for Research and Development [1/POLBER-3/2018]
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In the present work we report on the observation of carrier-induced screening of built-in electric fields in (Al, In)GaN laser diodes and superluminescent diodes. We use the emission peak energy as a measure of the quantum-confined Stark effect and its screening by free carriers. For superluminescent diodes we observe a steady increase of screening up to the current density of 10 kA cm(-2). This shows that the lasing in nitride laser diodes occurs under high electric fields, far from the flat band conditions. (C) 2019 The Japan Society of Applied Physics
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