Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab017f
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Funding
- National Natural Science Foundation of China [11574362, 61210014, 11374340, 11474205]
- Innovative clean-energy research and application program of Beijing Municipal Science and Technology Commission [Z151100003515001]
- National Key Technology R&D Program of China [2016YFB0400302]
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Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less than the band offset, the detector still realizes photo response up to 1.93 mu m. In addition, the detector shows the room-temperature external quantum efficiency of 7% and detectivity of 1.81 x 10(10) cm root HZ/W without anti-reflection layer. Based on the above quantum efficiency value, an absorption coefficient of 1.1 x 10(4) cm(-1) was also determined. It is clear that our work provides compelling evidences for the possibility of novel and low-cost infrared photodetector. (C) 2019 The Japan Society of Applied Physics
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