Journal
ADVANCED MATERIALS
Volume 31, Issue 10, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201806697
Keywords
charge injection; doping; F-4-TCNQ; organic field-effect transistors; PBTTT; solid-state diffusion
Categories
Funding
- National Creative Research Laboratory Program through the National Research Foundation of Korea - Korean Ministry of Science and ICT [2012026372]
- Korean Ministry of Trade, Industry Energy
- Korea Display Research Consortium support program [10051541]
- R&D Convergence Program of NST (National Research Council of Science & Technology) of Korea [CAP-15-04-KITECH]
- Doctoral Training Centre in Plastic Electronics [EP/G037515/1]
- European Research Council (ERC) through a Synergy Grant [610116]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051541] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [CAP-15-04-KITECH] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large-area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal-OSC interfaces, a non-ideal transfer curve feature often appears in the low-drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self-assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) by solid-state diffusion in poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) to enhance carrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated. Furthermore, the effect of post-doping treatment on diffusion of F-4-TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low-voltage operation of PBTTT OFETs with high-k gate dielectrics demonstrated a potential for designing scalable and low-power organic devices by utilizing doping of conjugated polymers.
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