Journal
ADVANCED MATERIALS
Volume 31, Issue 14, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201807435
Keywords
band alignment; passivation; perovskite solar cells; semiconducting polymers
Categories
Funding
- US Office of Naval Research [N00014-17-1-2524]
- Ontario Research Fund Research Excellence Program
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- China Scholarship Council [201608410244]
- National Natural Science Foundation of China [61306019]
- Natural Science Foundation of Henan Province [162300410026]
- Henan University Fund
- Netherlands Organisation for Scientific Research (NWO) [680-50-1511]
- National 1000 Young Talents award in China
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Banting Postdoctoral Fellowship Program
- [2016GGJS-019]
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Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permitsin contrast with previously studied insulator-based passivantsthe use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.
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