Journal
ACS NANO
Volume 13, Issue 3, Pages 3723-3729Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b01038
Keywords
Lewis acids; Nafion; crystalline silicon; room-temperature passivation; charge transfer
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Funding
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- U.S. Department of Energy, Solar Energy Technologies Office [DE-EE0008162]
- King Abdullah University of Science Technology [OSR-2017-GRGG-3383.01]
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The reduction of carrier recombination processes by surface passivation is vital for highly efficient crystalline silicon (c-Si) solar cells and bulk wafer metrological characterization. Herein, we report a dip coating passivation of silicon surfaces in ambient air and temperature with Nafion, achieving a champion effective carrier lifetime of 12 ms on high resistivity n-type c-Si, which is comparable to state-of-the-art passivation methods. Nafion is a nonreactive polymer with strong Lewis acidity, thus leading to the formation of a large density of fixed charges at silicon surface, 1-2 orders of magnitude higher than what is achievable with conventional thin-film passivation layers. Notably, Nafion passivates the c-Si surface only by the fixed charges without chemical modification of dangling bonds, which is fundamentally different from the common practice of combining chemical with field-effect passivation. This dip coating process is simple and robust, without the need for complex equipment or parameter optimization as there is no chemical reaction involved.
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