Journal
ACS NANO
Volume 13, Issue 2, Pages 2511-2519Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b09476
Keywords
photodetector; long-wavelength infrared; photoresponsivity; palladium diselenide; detectivity; heterostructure
Categories
Funding
- National Natural Science Foundation of China [91850208, 61725505, 61835012, 11734016, 61521005, 61674157]
- Fund of Shanghai Natural Science Foundation [18ZR1445800]
- Key Research Project of Frontier Science of Chinese Academy of Sciences [QYZDB-SSW-JSC031]
- Fund of SITP Innovation Foundation [cx-190]
- CAS Interdisciplinary Innovation Team
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A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of their low photoresponsivity, instability in the air, and high dark current. In this study, we report a highly sensitive, air-stable, and operable long-wavelength infrared photodetector at room temperature based on PdSe2 phototransistors and their heterostructure. A high photoresponsivity of similar to 42.1 AW(-1) (at 10.6 mu m) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe2 at the forefront of long-IR two-dimensional-materials-based photonics.
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