4.8 Article

An Oxide Schottky Junction Artificial Optoelectronic Synapse

Journal

ACS NANO
Volume 13, Issue 2, Pages 2634-2642

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b00340

Keywords

oxide heterojunction; Schottky junction; artificial synapse; visual memory; optoelectronic device

Funding

  1. National Key RAMP
  2. D Program of China [2017YFB0405604]
  3. National Natural Science Foundation of China [61704178, 61722407, 61774161, 61674153, 61504154, 51525103, 11474295]
  4. Natural Science Foundation of Zhejiang Province [LR17E020001]
  5. Public Welfare Technical Applied Research Project of Zhejiang Province [2017C31100]
  6. Ningbo Science and Technology Innovation Team [2015B11001]
  7. Ningbo Natural Science Foundation [2017A610093, 2018A610020]

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The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium-tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and learning-experience behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificial synapse suitable for the mimicry of interest-modulated human visual memories.

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