Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film

A recent hot-spot topic for flexible and wearable devices involves highperformance nonvolatile ferroelectric memories operating under compressive or tensile mechanical deformations. This work presents the direct fabrication of a flexible (Mn,Ti)-codoped multiferroic BiFeO3 film capacitor with Pt bottom and Au top electrodes on mica substrate. The fabricated polycrystalline Bi(Fe0.93Mn0.05Ti0.02)O-3 film on mica exhibits superior ferroelectric switching behavior with robust saturated polarization (P-s similar to 93 mu C/cm(2)) and remanent polarization (P-r similar to 66 mu C/cm(2)) and excellent frequency stability (1-50 kHz) and temperature resistance (25-200 degrees C), as well as reliable long-lifetime operation. More saliently, it can be safely bent to a small radius of curvature, as low as 2 mm, or go through repeated compressive/tensile mechanical flexing for 103 bending times at 4 mm radius without any obvious deterioration in polarization, retention time at 105 s, or fatigue resistance after 109 switching cycles. These findings demonstrate a novel route to designing flexible BiFeO3-based ferroelectric information storage and data processing, with promising applications in next-generation smart electronics.