Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 10, Pages 10068-10073Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b00050
Keywords
MoTe2; defect; photocurrent; gate modulation; trap and detrap; metal gate
Funding
- civil-military technology cooperation program [15-CM-MA-14]
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Imperfections in the crystal lattice, such as defects, grain boundaries, or dislocations, can significantly affect the optical and electrical transport properties of materials. In this study, we report the effect of mid gap trap states on photocurrent in 10 atomic layered 2H-MoTe2. Our study reveals that the photocurrent is very sensitive to the number of active traps, which can be controlled by V-gs. By fitting the measured transient drain current, our estimation shows that the trap-state density is approximately 5 x 10(11) cm(-2). By analyzing the photocurrent data as a function of the gate voltage, we realize how the ionized traps affect the photoexcited carriers. The model of hole traps, electron traps, and recombination centers inside the band gap successfully describes our observed results.
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