Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 7, Pages 7626-7634Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b21629
Keywords
MoS2; silicon; photodetector; p-n junction; heterojunction
Funding
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2016M3D1A1900035]
- Global Frontier Research Center for Advanced Soft Electronics [2011-0031640]
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In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred onto a Si layer; the resulting Si-MoS2 p-n photodiode shows excellent performance with a responsivity (R) and detectivity (D*) of 76.1 A/W and 10(12) Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si-MoS2 heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS2 thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82 x 10(-15) W Hz(-1/2). Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection.
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