Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 8, Pages 8412-8418Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b20357
Keywords
deep ultraviolet; ZnS quantum dots; graphene; photovoltaic detector; ultrafast
Funding
- Research and Development Program of China [2016YFB0402705]
- National Natural Science Foundation of China [11704261, 11575118, 61604178]
- Natural Science Foundation of SZU [2017067]
- Shenzhen Key Lab Fund [ZDSYS20170228105421966]
- Shenzhen Science & Technology Project [JCYJ20170817100658231]
- UK Engineering Physics and Science Research Council [EPSRC EP/P018998/1]
- Royal Society [1E161019]
- NFSC
- Royal academy of Engineering UK-Research Exchange with China and India
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Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28,us and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.
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