Investigations on Device Characteristics of Chemically Grown Nanostructured Y0.95Ca0.05MnO3/Si Junctions

Chemical solution deposition (CSD) grown nanostructured polycrystalline Y0.95Ca0.05MnO3/Si (YCMO/Si) films, annealed at different temperatures, have been studied for their device characteristics using temperature dependent current-voltage (I-V) and capacitance voltage (C-V) studied across YCMO/Si junctions. XRD study reveals the single crystalline growth of YCMO films along with polycrystalline hexagonal phase formation over the (100) single crystalline Si substrate. Island like grain growth in AFM and lift height induced modifications in the magnetic granular morphology have been observed in MFM experiments. Various models have been used to verify and understand the nature of the charge transport across the junctions using I-V data. It is observed that space charge limited conduction (SCLC) mechanism is found to be the prominent effect. Interface quality and lattice mismatch dependence of the capacitance indicates the ferroelectric response of the nanostructured YCMO/Si junctions.