Journal
ADVANCED MATERIALS
Volume 29, Issue 5, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604186
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Funding
- EPSRC, UK
- European Union of the MESO project [604032]
- AFOSR [FA9550-15-1-0115]
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Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH2)(2))(0.83)Cs0.17Pb(I0.6Br0.4)(3) perovskite as the photoactive layer, glass-glass laminated devices are reported, which sustain 80% of their post burn-in efficiency over 3400 h under full sun illumination in ambient conditions.
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