Journal
ADVANCED MATERIALS
Volume 28, Issue 12, Pages 2322-2329Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201505070
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Funding
- U.S. Army Research Office through the MIT Institute for Soldier Nanotechnologies [023674]
- National Science Foundation (NSF) [NSF/DMR 1004147]
- Department of Energy (DOE) [DE-SC0001299]
- Office of Naval Research (ONR) Presidential Early Career Awards for Scientists and Engineers (PECASE) program [021302-001]
- DOE-Basic Energy Sciences (BES)/Materials Science and Engineering (MSE) division [DE-AC02-98CH10886]
- Ministry of Science and Technology of the Republic of China [MOST 103-2112-M-007-001-MY3]
- National Science Foundation under NSF [ECS-0335765]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1004147] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-SC0001299] Funding Source: U.S. Department of Energy (DOE)
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Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly through selective sowing of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral hetero structures, which offers tremendous potential for its application in integrated circuits.
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