4.8 Article

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Journal

ADVANCED MATERIALS
Volume 28, Issue 24, Pages 4824-4831

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600032

Keywords

-

Funding

  1. National Research Foundation of Korea (NRF) - Korean government (MSIP) [2015R1A2A2A01002965]
  2. National Research Foundation of Korea [2015R1A2A2A01002965, 2015H1A2A1034635, 2013H1A2A1034786] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available