Journal
ADVANCED MATERIALS
Volume 28, Issue 43, Pages 9519-9525Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601949
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A2A2A01069023, 2015H1D3A1062519]
- Institute for Information and Communications Technology Promotion (IITP) - Korea government (MSIP) [B0117-16-1003]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [B0117-16-1003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015H1D3A1062519] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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An ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photo-response is studied at the heterointerface of the WSe2/MoS2 dual-channel FET.
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