Journal
ADVANCED MATERIALS
Volume 28, Issue 41, Pages 9133-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602157
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- King Abdullah University of Science and Technology (KAUST)
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A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4). The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
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