Journal
ADVANCED MATERIALS
Volume 29, Issue 11, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201605407
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Funding
- National Key Research and Development Projects of China [2016YFA0202300, 2016YFA0300604]
- National Basic Research Program of China [2013CBA01600]
- National Natural Science Foundation of China [51572290, 61222112, 51325204, 11334006]
- Chinese Academy of Sciences [1731300500015, XDB07030100, XDB07020100]
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Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.
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