Journal
ADVANCED MATERIALS
Volume 28, Issue 25, Pages 5019-5024Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600722
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Funding
- National Natural Science Foundation of China [51222201]
- fundamental Research Funds for the Central Universities [GK201502003]
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Anisotropic 2D layered material rhenium disulfi de (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 degrees C) and sulfur precursors in the temperature range of 460-900 degrees C with high efficiency.
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