Journal
ADVANCED MATERIALS
Volume 28, Issue 38, Pages 8388-8397Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602274
Keywords
artificial photosynthesis; metal nitride; N-terminated surfaces; polarization dependence; wurtzite structure; X-ray spectroscopy
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Funding
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-05CH11231, DE-SC0006931]
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Climate Change and Emissions Management (CCEMC) Corporation
- International Research Center for Renewable Energy, Xi'an Jiaotong University
- Thousand Talents plan
- National Natural Science Foundation of China [51202186]
- Natural Sciences and Engineering Research Council of Canada
- Chinese Scholarship Council
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The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arraysis revealed. Nitrogen termination of both the polar (000 (1) over bar) top face and the non polar (10 (1) over bar0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.
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